Electrostatic discharge protection element

Details Electrostatic discharge protection element Electrostatic discharge protection element

2005-07-26

2005-07-26

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S175000, C257S363000

Reexamination Certificate

active

06921931

ABSTRACT:
A the present invention provides an electrostatic discharge protection element to be used in a semiconductor integrated circuit providing MOSFET, comprising a thyristor and a trigger diode for triggering the thyristor into an ON-state, wherein the trigger diode provides an n-type cathode high concentration impurity region, a p-type anode high concentration impurity region and a gate formed between the two high concentration impurity regions, the gate being composed of the same material as that of a gate of MOSFET forming the semiconductor integrated circuit, and the thyristor provided with a p-type high concentration impurity region that forms a cathode and an n-type high concentration impurity region that forms an anode, and the p-type high concentration impurity region provides in a p well and connected to a resistor and/or the n-type high concentration impurity region provided in an n well and connected to a resistor.

REFERENCES:
patent: 6338986 (2002-01-01), Kawazoe et al.
patent: 6524893 (2003-02-01), Kawazoe et al.
patent: 11-204737 (1999-07-01), None
patent: 2001-267433 (2001-09-01), None

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