Electrostatic discharge protection device for high speed...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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C361S111000, C361S091100

Reexamination Certificate

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07817389

ABSTRACT:
A semiconductor device for coupling a transient voltage at an input node to a reference node, the device having a bipolar transistor adapted to couple its collector to an input node and its emitter to the reference node and a driver device adapted to be coupled between the input node and the base terminal of the transistor such that the driver device is responsive to a transient voltage at the input node to turn on the transistor, thereby shunting the transient voltage to the reference node. Preferably, the input node is coupled to a high speed data transmission line that operates below 5 v and the reference node is coupled to ground and the transistor is an NPN transistor. The driver may preferably be a gate-drain connected MOS transistor with its gate-drain terminal coupled to the collector terminal of the transistor and its source terminal coupled to the base terminal of the transistor. Alternatively, the driver may be a light emitting diode (LED) or any other diode with a different material (band-gap) and die size than the LED, connected to the bipolar transistor to create a low voltage clamping device.

REFERENCES:
patent: 4303831 (1981-12-01), El Hamamsy
patent: 5774318 (1998-06-01), McClure et al.
patent: 5811857 (1998-09-01), Assaderaghi et al.
patent: 6448123 (2002-09-01), Lee et al.
patent: 6560081 (2003-05-01), Vashchenko et al.
patent: 6600356 (2003-07-01), Weiss
patent: 6861677 (2005-03-01), Chen
Application Note AN-3001 Optocoupler Input Drive Circuits, Apr. 30, 2002, 1-6, www.fairchildsemi.com/an/AN/AN-3001.pdf.
Horowitz et al., The Art of Electronics, 1989, Cambridge University Press, 2nd edition, pp. 335-339.
Horowitz et al., The Art of Electronics, 1989, Cambridge University Press, p. 62.

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