Electrostatic discharge protection device for gallium arsenide r

Details Electrostatic discharge protection device for gallium arsenide r Electrostatic discharge protection device for gallium arsenide r

1989-11-15

1991-06-11

James, Andrew J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 2313, 357 51, 361 91, H01L 2948

Patent

active

050236725

ABSTRACT:
A mechanism for effectively preventing damage to a GaAs-resident semiconductor device directs electrostatic charge buildup to a neutralizing source of reference potential by means of a parasitic bypass Schottky circuit that is effectively invisible to normal input signals, but which otherwise provides a current sink discharge path for the unwanted electrostatic charge. The mechanism employs one or more parasitic Schottky diodes formed as a result of the deposition of input/power supply metal on the surface of a semi-insulating GaAs substrate, coupled in series with low resisitivity regions between the input metal and respective power supply terminals.

REFERENCES:
patent: 4803527 (1989-02-01), Hatta et al.
patent: 4807010 (1989-02-01), Winnerl et al.
patent: 4893159 (1990-01-01), Suzuki et al.
patent: 4922371 (1990-05-01), Gray et al.
patent: 4930036 (1990-05-01), Sitch
Sze, Semiconductor Devices: Physics and Technology, 1985, pp. 181-184.

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