Electrostatic discharge protection device and related circuit

Details Electrostatic discharge protection device and related circuit Electrostatic discharge protection device and related circuit

2011-02-01

2011-02-01

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S360000, C257SE29211

Reexamination Certificate

active

07880195

ABSTRACT:
An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a first N+diffusion region, a first P+diffusion region, and a first trigger node. The second STSCR comprises a second N-well electrically connected to the first N-well, a second P-well electrically connected to the first P-well, a second N+diffusion region electrically connected to the first P+diffusion region, a second P+diffusion region electrically connected to the first N+diffusion region, and a second trigger node. A layout area of an integrated circuit and a pin-to-pin ESD current path can be reduced.

REFERENCES:
patent: 6448123 (2002-09-01), Lee
patent: 6507471 (2003-01-01), Colclaser
patent: 6661060 (2003-12-01), Lee
patent: 6690557 (2004-02-01), Hung
patent: 6693780 (2004-02-01), Spehar
patent: 7170727 (2007-01-01), Richardson
patent: 2003/0042498 (2003-03-01), Ker
patent: 2003/0076636 (2003-04-01), Ker

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