Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2007-09-25

2010-02-23

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S122000, C257S141000, C257S162000, C257S173000, C257S175000, C257S353000, C257S355000, C257SE29225

Reexamination Certificate

active

07667241

ABSTRACT:
An electrostatic discharge protection device for protecting a node includes a transistor, a silicon controlled rectifier, a second contact region laterally displaced from the first contact region, and a collection region adjacent the source region. The transistor includes a semiconductor substrate, a source region, a channel region adjacent the source region, a gate over the channel region, and a drain region laterally displaced from the channel. The silicon controlled rectifier includes the source region, a portion of the substrate, a doped well, and a first contact region in the well, laterally displaced from the drain region. The collection region, the source region and the gate, are metallically connected. The node, the first contact region, and the second contact region, are metallically connected, and the drain region is not metallically connected to the node.

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