Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2006-09-19

2006-09-19

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S141000, C257S162000, C257S167000, C257S355000, C257S360000, C257S362000

Reexamination Certificate

active

07109533

ABSTRACT:
There is provided an electrostatic discharge protection device comprising a P conductive type first P well region101formed in a P type epitaxial layer31being deposited on a surface of a P+ substrate30having a prescribed thickness, an N conductive type first N well101a periphery thereof being brought into direct contact with and surrounded by a first P well region101, P conductive type first P diffusion regions121aand121b, a P conductive type third P diffusion region125, and an N conductive type second N diffusion region223arranged within a first P well region101, and a P conductive type second P diffusion region123and an N conductive type first N diffusion region221arranged within a first N well201.

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