Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2011-08-30

2011-08-30

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S124000, C257S173000, C257S355000, C257SE27031, C257SE29024

Reexamination Certificate

active

08008687

ABSTRACT:
An electrostatic discharge protection device including a substrate, a first doped region, a first gate electrode, a second doped region, a second gate electrode, and a third doped region is disclosed. The substrate has a first conductive type. The first doped region has a second conductive type and is formed in the substrate. The first gate electrode is formed on the substrate. The second doped region has the second conductive type and is formed in the substrate. A transistor is constituted by the first doped region, the first gate electrode, and the second doped region. The second gate electrode is formed on the substrate. The first and the second gate electrodes are separated. The third doped region has the first conductive type and is formed in the substrate. A discharge element is constituted by the first doped region, the second gate electrode, and the third doped region.

REFERENCES:
patent: 2002/0074602 (2002-06-01), Lin et al.

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