Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1992-05-29
1995-02-21
Hoff, Marc S.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361 91, 361111, H02H 904
Patent
active
053921852
ABSTRACT:
In one form of the invention, an Electrostatic Discharge protection device containing at least one heterojunction transistor is disclosed. In another embodiment, an Electrostatic Discharge protection circuit comprises: a first terminal contact 20; an NPN heterojunction bipolar transistor Q2; a PNP bipolar transistor Q1; a base-emitter shunt resistor R2; an emitter of said PNP transistor connected to said first terminal contact; a base of said PNP transistor connected to collector of said NPN transistor; a collector of said PNP transistor connected to a base of said NPN transistor; and an emitter of said NPN transistor connected to a second terminal contact 22, with said base-emitter shunt resistor connected between said base of said NPN transistor and an emitter of said NPN transistor, whereby a low-capacitance device capable of protecting semiconductor devices from electrostatic discharges in excess of 4000 Volts results. Other devices, systems, and methods are also disclosed.
REFERENCES:
patent: 4930036 (1990-05-01), Sitch
patent: 4939562 (1990-07-01), Adlerstein
patent: 5012317 (1991-04-01), Rountre
S. M. Sze, Physics of Semiconductor Devices, 2nd edition, Chapter 4, John Wiley and Sons, New York, 1981.
Haas, Jr. Glen R.
Nagle Thomas E.
Donaldson Richard L.
Hoff Marc S.
Jackson S.
Kesterson James C.
Skrehot Michael K.
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