Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1993-05-04
1994-05-10
Pellinen, A. D.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361 58, 361 91, H02H 900
Patent
active
053113918
ABSTRACT:
Electrostatic discharge (ESD) protection circuitry having a string of diode-connected field-effect transistors (FETs) connected between a bus and ground plane for triggering a shunt element, such as a large n-channel FET, connected between the same or a different bus and the ground plane. The bus or buses are diode-connected through the base-emitter junction of pnp transistors to signal pads, as well as to a positive voltage power supply. The string of FETs turns on when the pad-to-ground voltage, and thus the bus-to-ground voltage, exceeds a threshold characteristic of an ESD event. The string acts as a voltage divider to bring a node between two of the FETs up to a voltage that will activate an n-channel trigger FET, which is part of a resistive-load inverter. This drives another inverter that in turn drives the shunt FET. When the voltage is pulled back down below the threshold voltage, the shunt FET continues to shunt current to the ground plane for the duration of the ESD event.
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Coussens Eugene
Dungan Thomas
Hewlett--Packard Company
Medley Sally C.
Pellinen A. D.
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