Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1998-05-05
1999-06-01
Medley, Sally C.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361111, 357355, H02H 900
Patent
active
059093471
ABSTRACT:
An electrostatic discharge protection circuit protects an internal circuit that is coupled to a pad from electrostatic discharge damage. The electrostatic discharge protection circuit comprises a PNP transistor, a NPN transistor, and a P-type flash memory cell. The PNP and NPN transistors have an emitter, a base, and a collector, respectively. The PNP transistor is configured with its emitter connected to a power node, its base connected to the collector of the NPN transistor, its collector connected to the base of the NPN transistor. The emitter of the NPN transistor is connected to a circuit node. The flash memory cell is configured with a drain connected to the base of the NPN transistor, a source connected to the power node, and a control gate coupled to the power node. When electrostatic discharge stress occurs at the pad, the P-type flash memory cell enters breakdown to be programmed and triggers the conduction of the transistors.
REFERENCES:
patent: 5666307 (1997-09-01), Chang
patent: 5671111 (1997-09-01), Chen
Medley Sally C.
Winbond Electronics Corp.
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