Electrostatic discharge protection circuit and method of...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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C361S111000

Reexamination Certificate

active

06970336

ABSTRACT:
An ESD protection circuit (201) is for use with a high-voltage tolerant I/O circuit in an IC. This is accomplished by providing a small ESD diode (217) from the I/O pad to a relatively small boosted voltage bus (BOOST BUS). The BOOST BUS is used to power a trigger circuit (203). This path has very little current flow during an ESD event due to minimal current dissipation in the trigger circuit. There is a diode drop but only very little IR voltage drop from the I/O pad to the trigger circuit (203). The trigger circuit (203) controls relatively large cascoded clamp NMOSFETs (207, 209). The net result is that a gate-to-source voltage (VGS) of both of the clamp NMOSFETs is increased thus increasing the conductivity of the cascoded clamp NMOSFETs (207, 209). This reduces the on-resistance of each of the NMOSFETS (207, 209), thereby improving the ESD performance, and reducing the layout area required to implement robust ESD protection circuits.

REFERENCES:
patent: 5034845 (1991-07-01), Murakami
patent: 5301084 (1994-04-01), Miller
patent: 5654862 (1997-08-01), Worley
patent: 5907464 (1999-05-01), Maloney
patent: 5946177 (1999-08-01), Miller
patent: 5956219 (1999-09-01), Maloney
patent: 6385021 (2002-05-01), Takeda et al.
patent: 6724603 (2004-04-01), Miller et al.
Worley et al, “Sub-Micron Chip ESD Protection Schemes Which Avoid Avalanching Junctions,” EOS/ESD Symposium 1995, pp. 1.2.1-1.2.8.
Maloney et al., “Stacked PMOS Clamps for High Voltage Power Supply Protection,” EOS/ESD Symposium 1999, pp. 2A.2.1-2A.2.8.
Poon et al., “New Considerations for MOSFET Power Clamps,” EOS/ESD Symposium 2002, pp. 1A.1.1-1A.1.5.

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