Electrostatic discharge (ESD) protection structure

Details Electrostatic discharge (ESD) protection structure Electrostatic discharge (ESD) protection structure

2006-06-27

2006-06-27

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000

Reexamination Certificate

active

07067852

ABSTRACT:
An ESD protection structure includes a semiconductor substrate of a first conductivity type, and first and second well regions of a second conductivity type disposed in the substrate. The first and second well regions are separated by a gap region of the substrate. Also included are first and second floating regions (of the second conductivity type) disposed in the first and second well regions adjacent to the gap region, respectively. The ESD protection structure also includes first and second contact regions of the first conductivity type disposed on the first and second well regions, respectively, and spaced apart from the first and second floating regions, respectively. The ESD protection structure also includes first and second contact regions of the second conductivity type disposed on the first and second well regions, respectively, and spaced apart from the first and second floating regions, respectively.

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patent: 2-28348 (1990-01-01), None

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