Electrostatic discharge (ESD) circuit and method that...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07855862

ABSTRACT:
One example of an ESD protection circuit (100) can include a p-channel field effect transistor (PFET) (110) having a source-drain path connected between a pad (102) and a protected circuit (106). In an ESD event, PFET (110) can provide an ESD discharge path between pad (102) and a high power supply node (114) or low power supply node (112).

REFERENCES:
patent: 3947727 (1976-03-01), Stewart
patent: 4086642 (1978-04-01), Yoshida et al.
patent: 4691217 (1987-09-01), Ueno et al.
patent: 5329143 (1994-07-01), Chan et al.
patent: 5905621 (1999-05-01), Drapkin
patent: 5952850 (1999-09-01), Hojo et al.
patent: 6104588 (2000-08-01), Hariton et al.
patent: 6248616 (2001-06-01), Ravanelli et al.
patent: 6274909 (2001-08-01), Chang et al.
patent: 6522511 (2003-02-01), John et al.
patent: 6611154 (2003-08-01), Grasso et al.
patent: 6700431 (2004-03-01), Fotouhi et al.
patent: 6710990 (2004-03-01), Walker et al.
patent: 6809954 (2004-10-01), Madan et al.
patent: 6822840 (2004-11-01), Tan
patent: 7184253 (2007-02-01), Hartranft et al.
patent: 7564287 (2009-07-01), Chen
patent: 2004/0190209 (2004-09-01), Jozwiak et al.
patent: 2005/0275453 (2005-12-01), Douts et al.
patent: 2006/0267132 (2006-11-01), Lee
(Pavan et al.) P. Pavan, A. Pellesi, G. Meneghesso and E. Zanoni, “Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures”, Microelectronics and Reliability vol. 37, Issues 10-11, Oct.-Nov. 1997, pp. 1561-1564.
USPTO Notice of Allowance for U.S. Appl. No. 11/332,676 dated Nov. 6, 2006; 10 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrostatic discharge (ESD) circuit and method that... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic discharge (ESD) circuit and method that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge (ESD) circuit and method that... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4222559

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.