Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2006-05-09
2006-05-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S355000, C361S056000
Reexamination Certificate
active
07042028
ABSTRACT:
An electrostatic discharge (ESD) device, which functions like a diode during normal IC operation and like a SCR during an electrostatic discharge event, is provided. To form an equivalent SCR structure, the ESD device includes a plurality of N+ regions and a plurality of P+ regions formed inside an N-well. The P+ regions and the N+ regions are formed adjacent to each other in a sequence, and the regions located at both ends of the sequence are the N+ regions. In addition, the ESD device is integrated with a pad and is formed under the pad. Furthermore, since the pad has a large surface area and is plated to be a good electrical conductor, the current distribution in the ESD device is uniform.
REFERENCES:
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 4739378 (1988-04-01), Ferrari et al.
patent: 4939616 (1990-07-01), Rountree
patent: 5077591 (1991-12-01), Chen et al.
patent: 5223737 (1993-06-01), Canclini
patent: 5455436 (1995-10-01), Cheng
patent: 5637900 (1997-06-01), Ker et al.
patent: 5898205 (1999-04-01), Lee
patent: 5905288 (1999-05-01), Ker
patent: 5945713 (1999-08-01), Voldman
patent: 5949094 (1999-09-01), Amerasekera
patent: 6130117 (2000-10-01), Walker et al.
patent: 6177298 (2001-01-01), Quigley
patent: 6271999 (2001-08-01), Lee et al.
patent: 6441439 (2002-08-01), Huang et al.
patent: 6635931 (2003-10-01), Wang
patent: 6707653 (2004-03-01), Lee et al.
patent: 6765771 (2004-07-01), Ker et al.
patent: 6900969 (2005-05-01), Salling et al.
patent: 2002/0060345 (2002-05-01), Yu et al.
patent: 2003/0234405 (2003-12-01), Lai et al.
patent: 2004/0201033 (2004-10-01), Russ et al.
patent: 2004/0217425 (2004-11-01), Brodsky et al.
patent: 2004/0251502 (2004-12-01), Reddy et al.
patent: 2005/0133869 (2005-06-01), Ker et al.
patent: 2005/0151160 (2005-07-01), Salcedo et al.
patent: 2005/0212051 (2005-09-01), Jozwiak et al.
patent: 2005/0212052 (2005-09-01), Yach et al.
Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
Pert Evan
System General Corp.
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