Electrostatic discharge depolarization using high density...

Details Electrostatic discharge depolarization using high density... Electrostatic discharge depolarization using high density...

2005-02-08

2005-02-08

Tran, Huan (Department: 2861)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C361S212000, C361S213000

Reexamination Certificate

active

06852990

ABSTRACT:
A method for electrostatic discharge depolarization is implemented. The buildup of charge on tool structures in fabrication tools for semiconductor processing may be expected to be of concern whenever high voltage is employed near the structure in a tool. The process herein includes selectively exposing the structure to a plasma for a selected time interval. The duration of the exposure time interval is sufficient to reduce the polarization of the structure whereby the forces due to the polarization do not interfere with the transport or movement of a wafer being processed.

REFERENCES:
patent: 4825087 (1989-04-01), Renau et al.
patent: 5089710 (1992-02-01), Kikuchi et al.
patent: 5399871 (1995-03-01), Ito et al.
patent: 5545257 (1996-08-01), Vella
patent: 5900062 (1999-05-01), Loewenhardt et al.
patent: 6271529 (2001-08-01), Farley et al.
patent: 6452197 (2002-09-01), Ito
patent: 6-119903 (1994-04-01), None
patent: 6-120140 (1994-04-01), None
patent: 8-167595 (1996-06-01), None
patent: 09-186229 (1997-07-01), None
patent: 11-238486 (1999-08-01), None
patent: WO 9966549 (1999-12-01), None

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