Electrostatic discharge circuit

Details Electrostatic discharge circuit Electrostatic discharge circuit

1993-12-30

1996-01-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257154, 257162, 257165, 257169, 257174, 257175, 257358, 257361, 257362, 257363, 257575, 257577, 257579, H01L 2974, H01L 31111

Patent

active

054850240

ABSTRACT:
An ESD protection circuit which provides protection for CMOS devices against ESD potentials of up to about 10 kV is provided. The ESD protection circuit is able to provide protection against both positive-going and negative-going high energy electrical transients, and is able to maintain a high impedance state when driven to a voltage beyond the supply rails of CMOS integrated circuit, but less than tile breakdown voltage of the ESD protection circuit. The ESD protection circuit routes currents associated with ESD potentials to a predetermined arbitrary point which may be selected during the fabrication process to meet the needs of a particular application. The structure of the ESD protection circuit permits the holding current to be adjusted to accommodate the current capacity of various external circuits.

REFERENCES:
patent: 4633283 (1986-12-01), Avery
patent: 4897774 (1990-01-01), Bingham et al.
patent: 5285100 (1994-02-01), Byatt
Goldtharp et al., "An Integrated Circuit Composite PNPN diode", pp. 180-183, IEEE, 1979.
R. Vinsant, "Latch Up Protection of CMOS ICs," Teledyne Semiconductor CMOS Application Note 31, undated.

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