Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-08-15
2006-08-15
Benson, Walter (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S662000
Reexamination Certificate
active
07091726
ABSTRACT:
An electrostatic capacitance sensing device of exemplary embodiments of the present invention include M number of row lines, N number of column lines that are arranged in a matrix of M rows and N columns, N number of path gates for output signal, and electrostatic capacitance sensing elements provided at the intersections between the row and column lines. The electrostatic capacitance sensing element includes a signal sensing element, a signal amplifying element, a column selection element, and a row selection element. The signal sensing element includes a capacitance sensing electrode and a capacitance sensing dielectric film. The path gate for output signal, the signal amplifying element, the column selection element, and the row selection element are made up of thin-film semiconductor devices.
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“Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA)”, Utsunomiya et al., SID 00 Digest, Seiko Epson Cororation, Suwa, Japan, 2000.
Miyasaka Mitsutoshi
Sano Jun-ichi
Benson Walter
Oliff & Berridg,e PLC
Seiko Epson Corporation
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