Electrostatic breakdown protection circuit

Details Electrostatic breakdown protection circuit Electrostatic breakdown protection circuit

1990-04-10

1993-04-06

Stephan, Steven L.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 56, 361111, H02H 900

Patent

active

052008762

ABSTRACT:
An electrostatic breakdown protection circuit protects an internal circuit from positive and negative high voltages. One form of the protection circuit includes a hot line connected to the internal circuit for supplying a data signal, a bypass line, a first diode connected in a first direction between the hot line and the bypass line, and a second diode connected in a second direction between the hot line and the bypass line in parallel to the first diode.

REFERENCES:
patent: 4736271 (1988-04-01), Mack et al.
patent: 4855863 (1989-08-01), Yoshitake
patent: 4868705 (1989-09-01), Shiochi et al.
"Novel a-Si:H Thin Film High Voltage Transistor", Hsing C. Tuan; pp. 651-656.
"Physics of Novel Amorphous Silicon High-Voltage Transistor", Hack et al.; pp. 457-462.
"Gate Protection for CMOS/SOS", R. K. Pancholy; 15th Annual Proceedings-Reliability Physics 1977; pp. 132-137.

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