Electrostatic bonded, silicon capacitive pressure transducer

Details Electrostatic bonded, silicon capacitive pressure transducer Electrostatic bonded, silicon capacitive pressure transducer

1981-10-13

1983-11-15

Reynolds, B. A.

Electricity: electrical systems and devices

Electrostatic capacitors

Variable

29 2541, 29 2542, 357 26, H01G 700

Patent

active

044159480

ABSTRACT:
A plurality of silicon pressure transducers 10 are formed by processing two conductive silicon wafers 11, 14, one of the wafers including a layer of borosilicate glass 32, a thin portion of which 17 is on the surface 12 of one of the plates of a capacitor formed by field-assisted bonding together of the two wafers, the thin layer of borosilicate glass avoiding arcing during the field-assisted bonding process.

REFERENCES:
patent: 3634727 (1972-01-01), Polye
patent: 4016644 (1977-04-01), Kurtz
patent: 4092696 (1978-05-01), Boesen et al.

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