Electropolishing methods for etching substrate in self alignment

Details Electropolishing methods for etching substrate in self alignment Electropolishing methods for etching substrate in self alignment

1995-06-07

1996-10-15

Valentine, Donald R.

Electrolysis: processes, compositions used therein, and methods

Electrolytic erosion of a workpiece for shape or surface...

With programmed, cyclic, or time responsive control

205656, 205665, 205666, 205674, C25F 312, C25F 330

Patent

active

055650848

ABSTRACT:
Disclosed are electropolishing methods for etching a substrate in self alignment. A hole is formed in a substrate in self alignment by using an electropolishing system, wherein a reaction tube, an etchant solution, an electrode, a constant current source and the silicon substrate, said etchant solution being contained in a space confined by the reaction tube and the substrate, which is attached to one end of the reaction tube in such a way that the bottom of the substrate may be toward the interior of the space, said constant current source being connected with a metal layer formed on the substrate and the electrode. The substrate is made to be porous by flowing a constant current and etched by the action of the etchant solution while breaking the current. In addition to being economical, the methods can determine the position and size of the hole accurately and precisely. Further, neither chemical damage nor mechanical impact is generated on the substrate.

REFERENCES:
patent: 5139624 (1992-08-01), Searson et al.

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