Electrophotographic sensitive member

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

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430 83, G03G 514

Patent

active

055298664

DESCRIPTION:

BRIEF SUMMARY
FIELD OF THE INVENTION

The present invention relates to an electrophotographic sensitive member comprising an amorphous silicon carbide photoconductive layer and an organic photosemiconductive layer piled up on said amorphous silicon carbide photoconductive layer.


PRIOR ART

Inorganic materials, such as Se, Se-Te, As.sub.2 Se.sub.3, ZnO, CdS and amorphous silicon, and various kinds of organic material have been used for photoconductive materials of electrophotographic sensitive members. Of them, Se has been practically used first, and also ZnO, CdS and amorphous silicon have been practically used then. On the other hand, of the organic materials, PVK-TNF has been practically used first, and then a separated function type sensitive member, in which separate materials take partial charge of a function of generating electrical charges and a function of transporting electrical charges, has been proposed, and the development of the organic materials for the organic photosemiconductive layer has made rapid progress on account of this separated function type sensitive member.
On the other hand, also an electrophotographic sensitive member comprising an organic photosemiconductive layer piled up on the above described inorganic photoconductive layer has been proposed.
For example, a built-up sensitive member comprising a Si-layer and an organic photosemiconductive layer has been already practically used but with this sensitive member, disadvantages have occurred in that Se itself is harmful and a sensitivity on a long wavelength side is inferior.
So, a built-up sensitive member comprising an amorphous silicon carbide photoconductive layer and an organic photosemiconductive layer has been proposed in Japanese Patent Laid-Open No. Sho 56-14241. With this sensitive member, the above described points of problem were solved and the freedom from environmental pollution and the high photosensitive characteristics were obtained.
The electrophotographic sensitive member according to the above described Japanese Patent Laid-Open has a construction comprising an amorphous silicon carbide layer expressed by a chemical formula of Si.sub.1-x C.sub.x H.sub.y (wherein 0<x<1, 0.05.ltoreq.y.ltoreq.0.2) and an organic photosemiconductive layer piled up on said amorphous silicon carbide layer.
However, the inventors of the present invention have produced such the electrophotographic sensitive member and its photosensitivity, surface potential, residual potential and the like with the results that satisfactory characteristics have not been obtained yet and the further improvement is required.


DISCLOSURE OF THE INVENTION

Accordingly, the present invention has been achieved in view of the above described matters and it is an object of the present invention to provide an electrophotographic sensitive member capable of increasing the photosensitivity and charge acceptance and decreasing the residual potential.
It is a first object of the present invention to provide an electrophotographic sensitive layer comprising an amorphous silicon carbide photoconductive layer (hereinafter amorphous silicon carbide is called a-SiC for short) and an organic photosemiconductive layer piled up on an electrically conductive substrate in this order, characterized by that a constituent element of said a-SiC photoconductive layer is a Si element, C element as well as a H element or halogen element and provided that the H element or halogen element is expressed by an A element and an elemental ratio of said layer is expressed by a composition formula of [Si.sub.1-x C.sub.x ].sub.1-y A.sub.y 0<x<0.5 and 0.2<y<0.5 are held good between x and y.
A second invention of an electrophotographic sensitive member comprising an a-SiC photoconductive layer and an organic photosemiconductive layer piled up on an electrically conductive substrate in this order, characterized by that said a-SiC photoconductive layer comprises a first layer zone and a second layer zone, said first layer containing elements of the IIIa group (hereinafter called the II

REFERENCES:
patent: 4906546 (1990-03-01), Kawamura et al.
patent: 4997736 (1991-03-01), Kawamura et al.
patent: 5106711 (1992-04-01), Kawamura et al.

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