Electrophotographic recording material and method of producing i

Details Electrophotographic recording material and method of producing i Electrophotographic recording material and method of producing i

1988-05-24

1990-02-13

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 66, 430 84, 430 95, 430128, G03G 5082

Patent

active

049006460

ABSTRACT:
A method of producing an electrophotographic recording material, in which an aluminum substrate is coated with a blocking layer. The blocking layer is coated with a layer of amorphous silicon by direct current magnetron cathode sputtering. At least one sputter target containing silicon is used, and a power density of from about 2.0 W/cm.sup.2 to about 30 W/cm.sup.2 is used for the sputtering. The sputtering is performed in an atmosphere containing hydrogen and an inert gas, with a total pressure of inert gas and hydrogen being in a range from about 1.times.10.sup.-3 to about 10.times.10.sup.-3 mbar. This produces a layer of amorphous silicon having a hydrogen content of more than 40 atom %, an inert gas content in a range of 0.01 to 10 atom %, and in which the relative peak heights of the low and high temperature peaks during hydrogen effusion are approximately equal. The amorphous silicon layer is then coated with a cover layer.

REFERENCES:
patent: 4412900 (1983-11-01), Tanaka et al.
patent: 4738913 (1988-04-01), Shirai et al.
"Photovoltaic Properties of Amorphous Silicon Produced by Reactive Sputtering" Moustakas, Solar Energy Materials, vol. 13, pp. 373-384, 1986.
"Stability of Amorphous Silicon Photoreceptor for Diode Laser Printer Application," Nakayama et al., vols. 59 & 60, pp. 1231-1234, 1983.

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