Electrophotographic photoreceptor with doped Se or Se alloy inte

Details Electrophotographic photoreceptor with doped Se or Se alloy inte Electrophotographic photoreceptor with doped Se or Se alloy inte

1989-08-04

1991-02-05

Martin, Roland

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 63, 430 95, G03G 547, G03G 514

Patent

active

049904205

ABSTRACT:
In an electrophotographic photoreceptor, a layer is interposed between the electroconductive substrate and the surface photosensitive layer or between the carrier transport layer and the carrier generation layer of the photosensitive layer, said layer being made of an Se-As alloy, Se-Te alloy, or pure Se incorporated with any of Ga, In, Zn, Au, Ag, C, Pt, Ge, Pb, and Sb to reduce the band gap. This layer increases the efficiency of hole injection from the substrate, resulting in the rapid decay of negative charging.

REFERENCES:
patent: 3647427 (1972-03-01), Harada et al.
patent: 3801966 (1974-04-01), Terao
patent: 4170476 (1979-10-01), Sadamatsu et al.
patent: 4463279 (1984-07-01), Shidara et al.

Affiliated with

Also associated with

Rating

Electrophotographic photoreceptor with doped Se or Se alloy inte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrophotographic photoreceptor with doped Se or Se alloy inte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrophotographic photoreceptor with doped Se or Se alloy inte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-9961