Electrophotographic member with alpha-si layers

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

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2525011, 427 39, 427 74, 430 84, 430133, 430136, G03G 5082

Patent

active

RE0330949

ABSTRACT:
In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4289822 (1981-09-01), Shimada et al.
patent: 4451546 (1984-05-01), Kawamura et al.
patent: 4673628 (1987-06-01), Inoue et al.

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