Electrophotographic member with .alpha.-Si layers

Details Electrophotographic member with .alpha.-Si layers Electrophotographic member with .alpha.-Si layers

1981-04-15

1983-03-29

Martin, Jr., Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, 430133, 430136, 2525011, 427 39, 427 74, 204192P, G03G 5082

Patent

active

043784178

ABSTRACT:
In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4289822 (1981-09-01), Shimada et al.

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