Electrophotographic member with .alpha.-Si and H

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

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430 64, 430 67, 430 84, 430133, 430136, 2525011, 427 39, 427 74, 204192P, 355 3R, G03G 5082, G03G 514

Patent

active

043776280

ABSTRACT:
Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.
That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempta
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4289822 (1981-09-01), Shimada et al.

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