Electrooptic system array, charged-particle beam exposure...

Details Electrooptic system array, charged-particle beam exposure... Electrooptic system array, charged-particle beam exposure...

2006-05-02

2006-05-02

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S491100, C250S492100, C250S492200, C250S492220, C250S492300

Reexamination Certificate

active

07038226

ABSTRACT:
A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semiconductor manufacturing apparatuses, and a gateway for connecting the local area network to an external network of the semiconductor manufacturing factory. The exposure apparatus includes a lens array, which has a plurality of lenses and directs a plurality of charged particle beams onto a substrate. The lens array includes at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode interposed between the at least two electrodes.

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