Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-03-21
2006-03-21
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S291000
Reexamination Certificate
active
07015509
ABSTRACT:
An electrooptic-device substrate includes a first IC-mounting area on which a first IC is mounted following a substrate edge of the electrooptic-device substrate, at least one second IC-mounting area on which a second IC is mounted, and a substrate-connection area to which a flexible substrate is connected, wherein the substrate-connection area is provided so as to be nearer the substrate edge than the first and second IC-mounting areas, and the electrooptic-device substrate includes a first wiring pattern extending from the first IC-mounting area to the substrate-connection area and a second wiring pattern that extending from the second IC-mounting area, between first pads formed in the first IC-mounting area and reaching the substrate-connection area.
REFERENCES:
patent: 6882390 (2005-04-01), Hinata et al.
patent: 2572134 (1988-03-01), None
Harness & Dickey & Pierce P.L.C.
Nguyen Cuong
Seiko Epson Corporation
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