Electronically programmable and erasable memory device having fl

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

365185, 365182, 365218, 357 59, H01L 2978, H01L 2904, G11C 1134, G11C 700

Patent

active

048128988

ABSTRACT:
An electrically programmable and erasable memory device is disclosed, in which carriers such as electrons transfer between a floating gate electrode made of polycrystalline silicon and a drain region through a thin insulating film portion provided on a part of the drain region by an electric field induced in the thin insulating film portion. The floating gate electrode has such an impurity concentration distribution that the concentration of a portion adjacent to the thin insulating film portion is lower than the concentration of the remaining portion.

REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4435786 (1984-03-01), Tickle
patent: 4688078 (1987-08-01), Hseih

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