Electronic timepiece utilizing semiconductor-insulating substrat

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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58 23AC, 307220C, 328 16, 331108A, 331108C, 357 4, 357 42, G04C 300, H01L 2702

Patent

active

041062787

ABSTRACT:
An electronic timepiece wherein the timekeeping circuitry utilizes semiconductor-insulating substrate integrated circuitry for effecting high frequency operation is provided. The timepiece includes an oscillator circuit adapted to produce a high frequency time standard signal and is comprised of at least one inverter stage coupled to a high frequency time standard. A divider circuit formed of a plurality of series-connected divider stages produces a low frequency timekeeping signal in response to the high frequency time standard signal being applied thereto. A display is provided for displaying time in response to the timekeeping signal being applied thereto. The oscillator circuit, divider circuit and display include integrated circuit elements and at least the inverter stage of the oscillator circuit includes at least one complementary coupled pair of P-channel and N-channel conductive field-effect transistors having a semiconductor-insulating substrate construction.

REFERENCES:
patent: 3707071 (1972-12-01), Walton
patent: 3714867 (1973-02-01), Dargent
patent: 3737746 (1973-06-01), Cielaszyk et al.
patent: 3895486 (1975-07-01), Hammer et al.
patent: 3913006 (1975-10-01), Fillmore
patent: 3922844 (1975-12-01), Sakamoto
patent: 3939644 (1976-02-01), Wolf
patent: 3945194 (1976-03-01), Gollinger
patent: 3958266 (1976-05-01), Athanas
S. S. Eaton, Sapphire brings out the best in C-MOS, Electronics, Jun. 12, 1975, pp. 115-120.

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