Electronic switching device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

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Details

307304, 307308, 324133, H03K 1900

Patent

active

040548058

ABSTRACT:
A field effect transistor of the N junction, P junction, or MOS FET type and having a load connected in series with its source and drain electrodes is normally biased off by a diode circuit which causes the FET to conduct when an input voltage is applied to an input terminal of the diode means.

REFERENCES:
patent: 3382408 (1968-05-01), Atkins
patent: 3660688 (1972-05-01), Evans et al.
patent: 3678297 (1972-07-01), Takahashi
patent: 3848108 (1974-11-01), Takarada

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