Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2008-07-22
2008-07-22
Tan, Vibol (Department: 2819)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S765010, C326S016000, C327S365000
Reexamination Certificate
active
07403026
ABSTRACT:
The invention relates to an electronic switching circuit in which a plurality of test circuit blocks is provided, whereby every test circuit block comprises a first sub-circuit block and at least one second sub-circuit block. A field effect transistor in the first sub-circuit block has a gate insulation layer that is thicker than the gate insulation layer of a field effect transistor in the second sub-circuit block.
REFERENCES:
patent: 4339710 (1982-07-01), Hapke
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5768290 (1998-06-01), Akamatsu
patent: RE35838 (1998-07-01), Momodomi et al.
patent: 6046627 (2000-04-01), Itoh et al.
patent: 6097113 (2000-08-01), Teraoka et al.
patent: 6307234 (2001-10-01), Ito et al.
patent: 6778002 (2004-08-01), Miyazaki et al.
patent: 7154133 (2006-12-01), Koyama
patent: 2001/0045841 (2001-11-01), Kondo et al.
patent: 2002/0008999 (2002-01-01), Hidaka
patent: 29 05 271 (1980-08-01), None
patent: 38 86 722 (1994-04-01), None
B. Kaczer et al., “Impact of MOSFET oxide breakdown on digital circuit operation and reliability”,IEDM 00, 2000, month unknown.
B. Kaczer et al., “Impact of MOSFET Gate Oxide Breakdown on Digital Circuit Operation and Reliability”,IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002.
B. Kaczer et al., “Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits”,IEDM Tech. Dig., 2002, month unknown.
B. P. Linder, “Transistor-Limited Constant Voltage Stress of Gate Dielectrics”,Symposium on VLSI Technology Digest of Technical Papers, 2001, month unknown.
R. Rodriguez et al., “The Impact of Gate-Oxide Breakdown On SRAM Stability”,IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002.
R. Rodriguez et al., “A Model For Gate-Oxide Breakdown in CMOS in Inverters”,IEEE Electron Device Letters, vol. 24, No. 2, Feb. 2003.
Kerber Martin
Pompl Thomas
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Tan Vibol
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