Electronic switch

Details Electronic switch Electronic switch

1985-02-04

1986-09-16

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, H03K 1772

Patent

active

046124489

ABSTRACT:
Connected in series with a thyristor (1) are two IGFETs (2, 3) one to the anode side and the other to the cathode side. Between the inner thyristor zones (6, 8) and the outer IGFET connections, a threshold circuit (10, 11) is connected to each. The threshold voltage of the threshold circuit is higher than that of the p-n junctions between the outer and adjacent inner thyristor zones (6, 7; 8, 9) including the voltage drop of the conducting IGFET. The switch is turned off by operating to turn off the IGFETs. The current then flows via the threshold elements through the two inner zones (6, 8). The charge carriers of this diode are evacuated very quickly, since carrier injection from the outer zones is no longer possible.

REFERENCES:
patent: 3619652 (1971-11-01), Ogle
B. J. Baliga, "High Gain Power Switching Using Field Controlled Thyristors", Solid-State Electronics, vol. 25, No. 5, pp. 345-353, 1982.

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