Electronic structures with reduced capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S377000, C257S295000, C257S310000, C257S531000, C438S623000

Reexamination Certificate

active

06958526

ABSTRACT:
An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the leakage curent by tailoring the composition of SiCOH.

REFERENCES:
patent: 6337151 (2002-01-01), Uzoh et al.
patent: 6528432 (2003-03-01), Ngo et al.
patent: 6737727 (2004-05-01), Gates et al.
patent: 2002/0084257 (2002-07-01), Bjorkman et al.
patent: 2003/0017635 (2003-01-01), Apen et al.
patent: 2004/0051178 (2004-03-01), Cohen et al.

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