Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-04
2011-01-04
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S632000, C257S774000, C257S758000
Reexamination Certificate
active
07863749
ABSTRACT:
A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.
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Gates Stephen M.
Miller Robert D.
International Business Machines - Corporation
Luu Chuong A.
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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