Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2008-08-20
2010-11-16
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257SE21508, C257SE23021, C438S612000, C438S613000
Reexamination Certificate
active
07834454
ABSTRACT:
Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.
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Mis J. Daniel
Rinne Glenn A.
Myers Bigel Sibley & Sajovec P.A.
Nguyen Khiem D
Unitive International Limited
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