Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reissue Patent
2008-04-08
2008-04-08
Pham, Hoai V (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S566000, C257S570000, C257SE27053, C257SE27055
Reissue Patent
active
RE040222
ABSTRACT:
A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a first electrode in contact with the first termination region, and a second electrode shaped in the form of a frame close to the edge of the chip and connected to a third electrode in contact with the bottom of the chip. A fourth electrode made in one piece with the first electrode is in contact with the first region. The termination structure also comprises a fifth electrode in contact with the epitaxial layer along a path parallel to the edge of the first termination region and connected to the second electrode and a second P type termination region that surrounds the fifth electrode and a sixth electrode, and which is in contact with the second termination region, connected to the first electrode.
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Carlson David V.
Jorgenson Lisa K.
Pham Hoai v
STMicroelectronics S.r.l.
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