Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-07-13
2010-02-02
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S709000, C257S701000, C257S729000, C257S702000, C438S125000
Reexamination Certificate
active
07656023
ABSTRACT:
In an electronic parts packaging structure of the present invention, an electronic parts is mounted or formed on a silicon circuit substrate having a structure in which wiring layers on both sides thereof are connected to each other through a through electrode, and a protruded bonding portion which is ring-shaped and is made of glass, of a seal cap having a structure in which a cavity is constituted by the protruded bonding portion, is anodically bonded to a bonding portion of the silicon circuit substrate, thus, the electronic parts is hermetically sealed in the cavity of the sealing cap.
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Higashi Mitsutoshi
Shiraishi Akinori
Sunohara Masahiro
Edwards Angell Palmer & & Dodge LLP
Green Telly D
Shinko Electric Industries Co. Ltd.
Smith Zandra
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