Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-19
2007-06-19
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S772000, C257S781000, C257SE23023
Reexamination Certificate
active
10986814
ABSTRACT:
There is provided a surface treatment method for an electronic part, which uses a metal not containing lead and tin and having excellent solder wettability, is economical and has high reliability. In the surface treatment method for the electronic part in which a soldered part is subjected to a surface treatment of structure of three layers of nickel, palladium and gold, the palladium layer and the gold layer are formed by an electrolytic plating treatment, a thickness of the palladium layer is in a range of 0.007 to 0.1 μm, a thickness of the gold layer is in a range of 0.003 to 0.02 μm, and a relation of the thickness of the gold layer<the thickness of the palladium layer is established.
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Abbott, D., Romm, D., Lange, B., A Nickel-Palladium Integrated Circuit Lead Finish and Its Potential for Solder-Joint Embrittlement, Dec. 2001, Texas Instruments Application Report pp. 1-4□□URL: http://focus.ti.com/lit/an/szza031/szza031.pdf.
Internet official homepage of Nagano prefecture, Feb. 17, 2003, 15 pp.
Shinei Hi-Tech Co., Ltd.
Tran Minh-Loan
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