Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-13
2005-09-13
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S435000, C257S680000, C257S687000, C257S778000
Reexamination Certificate
active
06943424
ABSTRACT:
A photo-sensing device package is provided. The package includes a substrate, at least one photo-sensing semiconductor die coupled to the substrate, and a patterned layer formed on a light receiving surface of the substrate. The substrate is formed of a material substantially transparent to light within a predetermined range of wavelengths, provided with front and backside surfaces on opposite sides thereof. The photo-sensing semiconductor die defines at least one photo-sensing area opposing the substrate front surface for receiving light impinging upon the substrate's backside surface and passing therethrough. The patterned layer is formed on the substrate's backside surface for blocking passage of at least a portion of the light otherwise impinging upon that backside surface, and is formed with a window opening aligned with at least a portion of the photo-sensing area for optical communication therewith through the substrate.
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Optopac, Inc.
Quach T. N.
Rosenberg , Klein & Lee
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