Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1994-04-08
1996-04-16
Moore, David K.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
395 25, 257 14, 257 21, 257 23, 257184, H01L 29161, G06F 1518
Patent
active
055091059
ABSTRACT:
A multi-well diode is disclosed which can be used with other electronic components as an electronic neuron circuit. The multi-well diode has an S-shaped current-voltage characteristic curve at forward bias whereby it remains in a low conductance state until its threshold voltage is exceeded, then switches through an unstable region of its characteristic curve into a high conductance state. The multi-well diode remains in the high conductance state until its bias voltage and current drops below its holding condition, at which time it switches into a low conductance state. The multi-well diode can be used in a pulse-mode input circuit, thereby generating a pulse-mode output signal which can have a different amplitude and frequency than the input signal. Such pulse-mode input circuits can be either excitatory or inhibitory in operation. The multi-well diode can also be used in a direct current input circuit, having a pulse-mode output signal having a frequency which is related to the input signal's voltage or current. Such circuits emulate biological neurons in electrical characteristics. Such circuits also can have multiple inputs and outputs, and those inputs and outputs can be individually weighted (which is also similar to the operation of biological neurons). The electronic neuron circuits can alternatively be used with optical input or output signals rather than electrical input/output signals. Such circuits can be integrated into neural systems.
REFERENCES:
patent: 4167791 (1979-09-01), Banavar et al.
patent: 4450463 (1984-05-01), Chin
patent: 4602352 (1986-07-01), Coon et al.
patent: 4603401 (1986-07-01), Coon
patent: 4679061 (1987-07-01), Capasso et al.
patent: 4760430 (1988-07-01), Coon et al.
patent: 4873555 (1989-10-01), Coon et al.
patent: 5030831 (1991-07-01), Coon et al.
patent: 5121181 (1992-06-01), Smith et al.
patent: 5130762 (1992-07-01), Kulick
patent: 5144397 (1992-09-01), Tokuda et al.
patent: 5148267 (1992-09-01), Ty Tan et al.
patent: 5198682 (1993-03-01), Wu et al.
Physics of Semicond. Devices, 2nd Ed., Thyristors pp. 190-193,etc. 1981.
Motorola Application Note AN-849, 1982, "Guide to Thyristor Applications".
Motorola Engineering Bulletin EB-106, 1983.
Impact Ionization Across the Conduction Band Discontinuity of Quantum-well Heterostructures, S. L. Chuang & K. Hess, Journal of Applied Physics, vol. 59, (1986).
New Avalanche Multiplication Phenomenon in Quantum Well Superlattices: Evidence of Impact . . . Discontinuity, Capasso et al. Appl. Phys. Lett., vol. 48, (1986).
Theory of S-type Current-Voltage Characteristics of Multi-Layer Isotypic n+-n Heterostructures, Merzin et al. Sov. Phys. Semicond., vol. 20, (Jul., 1986).
Transverse Transport in Multilayer Heterostructures under Carrier Heating Conditions V. I. Tolstikhin, Sov. Phys. Semicond., vol. 20, p. 1375 (Dec. 1986).
Semiconductor Electronic Concepts for Neural Network Emulation, D. D. Coon & A. G. U. Perera, Inter. J. Electronics, vol. 63, p. 61, (1987).
Tunneling-Assisted Impact Ionization for a Superlattice, S. L. Chuang & K. Hess, J. Appl. Phys., vol. 61, p. 1510 (1987).
Mechanism of an S-shaped Current-Voltage Characteristic in a Multilayer Isotypic GaAs-AlGaAs Heterostructure, Alferov et al. Sov. Phys. Semicond., vol. 21, (Mar. 1987).
Neuron-like Transient Phenomena in silicon P-I-N Structures, D. D. Coon and A. G. U. Perera, Solid State Electronics, vol. 31, p. 851, (1988).
New Hardware for Massive Neural Networks, Coon et al., Neural Information Processing Systems, ed., Anderson, Amer. Instit. Physics, NY, NY (1988).
Integrate-and-Fire Coding and Hodgkin-Huxley Circuits Employing Silicon Diodes D. D. Coon and A. G. U. Perera, Neural Networks, vol. 2, p. 143 (1989).
Design of an GaAs/AlGaAs Multi-Quantum Well Structure for Use in Neural-like Pulse Mode Circuits, Song et al. Bulletin of the American Physical Society, vol. 36 (1991).
The Superlattice Photodetector: A New Avalanche Photodiode with a Large Ionization Rates Ratio, Capasso et al., Int'l Electron Devices Meeting, pp. 284-287 (Dec. 1981).
Roenker Kenneth P.
Song Chungkun
Katbab A.
Moore David K.
University of Cincinnati
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