Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-04-01
2008-04-01
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S189050, C365S230060
Reexamination Certificate
active
11292741
ABSTRACT:
An electronic memory using true and complementary dual bit lines and dual binary storage elements cell architecture comprising a memory cell pair with four binary storage elements with each memory cell pair capable of existing in up to sixteen electronic memory states. The four binary storage elements together, normally used to store two true and complementary data bits, are used to store two, three, or four data bits depending on the noise margin allowed and bit width selection. The memory can be ferroelectric memory FeRAM, a flash memory, a ROM, a dynamic memory DRAM, an OUM, a MRAM, a NAND memory, or a NOR memory.
REFERENCES:
patent: 4287670 (1981-09-01), Stark
patent: 4388702 (1983-06-01), Sheppard
patent: 4586163 (1986-04-01), Koike
patent: 4653023 (1987-03-01), Suzuki et al.
patent: 4661929 (1987-04-01), Aoki et al.
patent: 4771404 (1988-09-01), Mano et al.
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 4964079 (1990-10-01), Devin
patent: 5043940 (1991-08-01), Harari
patent: 5218569 (1993-06-01), Banks
patent: 5283761 (1994-02-01), Gillingham
patent: 5351210 (1994-09-01), Saito
patent: 5515324 (1996-05-01), Tanaka
patent: 5790456 (1998-08-01), Haddad
patent: 6233173 (2001-05-01), Chevallier et al.
patent: 6310815 (2001-10-01), Yamagata et al.
patent: 6483373 (2002-11-01), Lim et al.
patent: 2003/0202396 (2003-10-01), Blodgett
patent: 2003/0206430 (2003-11-01), Ho
patent: 2004/0080979 (2004-04-01), Park
patent: 0256935 (1988-02-01), None
patent: 1298670 (2003-04-01), None
Hoang Huan
Iota Technology, Inc.
Patton & Boggs LLP
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