Electronic memory, such as flash EPROM, with...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185290

Reexamination Certificate

active

06975535

ABSTRACT:
A memory such as a flash EPROM contains writing circuitry (58and60) that adjusts how much current or/and voltage is provided to a writing conductor (92) connected to the memory cells (50) of a cell group for simultaneously writing the bits of a bit group such as a word or byte into the cells of that cell group as a function of how many of those bits are in one of a pair of opposite logic states.

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patent: 6562681 (2003-05-01), Tuan et al.
patent: 6584018 (2003-06-01), Tuan et al.
patent: 6674669 (2004-01-01), Tuan et al.

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