Electronic memory having impedance-matched sensing

Details Electronic memory having impedance-matched sensing Electronic memory having impedance-matched sensing

2006-10-24

2006-10-24

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185130, C365S185210, C365S230030

Reexamination Certificate

active

07126853

ABSTRACT:
An electronic memory, typically a flash EPROM, contains an array of memory sections (40), each containing an array of memory cells (54). Global bit lines (60) fully traverse the memory. Local bit lines (58) partially traverse the memory. Data stored in the memory is sensed with an arrangement that utilizes impedance matching to achieve high sensing accuracy with low noise sensitivity. The impedance matching may be provided solely from the sections and lines of the memory or partially from a separate reference memory section (102) that contains reference memory cells (104).

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