Electronic memory device having high density non-volatile...

Static information storage and retrieval – Hardware for storage elements – Shields

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185170

Reexamination Certificate

active

07319604

ABSTRACT:
An electronic memory device with a high density of non-volatile memory cells has a reduced capacitance cell-to-cell interference. The memory cells are integrated on a semiconductor substrate and are organized in a matrix of cells with word lines and bit lines connected to the cells. Each memory cell includes at least one floating gate transistor having a floating gate region projecting from the substrate, and a control gate region capacitively coupled to the floating gate region. Between the cells of opposite word lines, a lateral coating is provided that includes at least one conductive layer floating along the direction of the bit lines.

REFERENCES:
patent: 5455793 (1995-10-01), Amin et al.
patent: 2003/0201487 (2003-10-01), Yang et al.
patent: 2003/0210582 (2003-11-01), Kinoshita
patent: 2004/0232496 (2004-11-01), Chen et al.
patent: 1435657 (2004-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electronic memory device having high density non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electronic memory device having high density non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic memory device having high density non-volatile... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2753360

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.