Electronic memory device having high density non-volatile...

Details Electronic memory device having high density non-volatile... Electronic memory device having high density non-volatile...

2008-01-15

2008-01-15

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Hardware for storage elements

Shields

C365S185170

Reexamination Certificate

active

07319604

ABSTRACT:
An electronic memory device with a high density of non-volatile memory cells has a reduced capacitance cell-to-cell interference. The memory cells are integrated on a semiconductor substrate and are organized in a matrix of cells with word lines and bit lines connected to the cells. Each memory cell includes at least one floating gate transistor having a floating gate region projecting from the substrate, and a control gate region capacitively coupled to the floating gate region. Between the cells of opposite word lines, a lateral coating is provided that includes at least one conductive layer floating along the direction of the bit lines.

REFERENCES:
patent: 5455793 (1995-10-01), Amin et al.
patent: 2003/0201487 (2003-10-01), Yang et al.
patent: 2003/0210582 (2003-11-01), Kinoshita
patent: 2004/0232496 (2004-11-01), Chen et al.
patent: 1435657 (2004-07-01), None

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