Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-28
2010-06-15
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51001, C428S333000, C428S411100, C428S457000
Reexamination Certificate
active
07737433
ABSTRACT:
The electronic properties of molecular junctions of the general type carbon/molecule/TiO2/Au as examples of “molecular heterojunctions” consisting of a molecular monolayer and a semiconducting oxide. Junctions containing fluorene bonded to pyrolyzed photoresist film (PPF) were compared to those containing Al2O3instead of fluorene, and those with only the TiO2layer. The responses to voltage sweep and pulse stimulation were strongly dependent on junction composition and temperature. A transient current response lasting a few milliseconds results from injection and trapping of electrons in the TiO2layer, and occurred in all three junction types studied. Conduction in PPF/TiO2/Au junctions is consistent with space charge limited conduction at low voltage, then a sharp increase in current once the space charge fills all the traps. With fluorene present, there is a slower, persistent change in junction conductance which may be removed by a reverse polarity pulse. This “memory” effect is attributed to a redox process in the TiO2which generates TiIIIand/or TiII, which have much higher conductance than TiO2due to the presence of conduction band electrons. The redox process amounts to “dynamic doping” of the TiO2layer by imposed electric field. The memory effect arises from a combination of the properties of the molecular and oxide layers, and is a special property of the molecular heterojunction configuration.
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McCreery Richard L.
Mobley Kenneth J.
Wu Jing
Ho Anthony
Parker Kenneth A
Standley Law Group LLP
The Ohio State University Research Foundation
Zettacore, Inc.
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