Electronic gain cell based charge sensor

Details Electronic gain cell based charge sensor Electronic gain cell based charge sensor

2005-10-11

2005-10-11

Wilson, Christian (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S252000, C438S049000

Reexamination Certificate

active

06953958

ABSTRACT:
A gated metal oxide semiconductor field effect transistor (MOSFET) gain cell is formed with a flow channel for molecule flow. The flow channel is formed under the gate, and between a source and drain of the transistor. The molecule flow modulates a gain of the transistor. Current flowing between the source and drain is representative of charges on the molecules flowing through the flow channel. A plurality of individually addressable gain cells are coupled between chambers containing samples to measure charges on molecules in the samples passing through the gain cells.

REFERENCES:
patent: 4411741 (1983-10-01), Janata
patent: 4514263 (1985-04-01), Janata
patent: 4671852 (1987-06-01), Pyke
patent: 5683569 (1997-11-01), Chung et al.
patent: 5747839 (1998-05-01), Hammond et al.
patent: 5892252 (1999-04-01), Hammond et al.
patent: 6248626 (2001-06-01), Kumar et al.
patent: 6445032 (2002-09-01), Kumar et al.
patent: 6753200 (2004-06-01), Craighead et al.
patent: 2004/0248349 (2004-12-01), Renna et al.
Alper, J., “From the bioweapons trenches, new tools for battling microbes”,Science, 2284 (5421), (Jun. 1999), 1754-1755.
De Gennes, Pierre-Gilles, “Passive Entry of a DNA Molecule into a Small Pore”,Proceedings of the National Academy of Sciences, 96, (1999), 7262-7264.
Duke, T., et al., “Microfabricated sieve for the continuous sorting of macromolecules”,Physical Review Letters, 80 (7), (1998), 1552-1555.
Kasianowicz, E., et al., “Characterization of Individual Polynucleotide Molecules Using a Membrane Channel”,Proceedings of National Academy of Sciences, 93, (1996), 13770-13773.
Neugebauer, C. A., et al., “Electrical conduction mechanism in ultrathin, evaporated metal films”,Journal of Applied Physics, 33 (1), (1962), 74-82.
Tiwari, S., et al., “CMOS and Memories: From 100 nm to 10 nm”,Microelectronic Engineering, 46 (1-4), (May 1999), 3-6.
Tiwara, S., et al., “Single Charge and Confinement Effects in Nano-Crystal Memories”,Applied Physics Letters, 69 (9), (1996), 1232-1234.
Volkmuth, W. D., et al., “DNA Electrodiffusion in a 2D Array of Posts”,Physical Review Letters, 72 (13), (Mar. 1994), 2117-2120.
Welser, J. J., et al., “Room Temperature Operation of a Quantum-Dot Flash Memory”,IEEE Electron Device Letters, 18 (6), (Jun. 1997), 278-280.
Wilkerson, C. W., et al., “Detection and Lifetime Measurement of Single Molecules in Flowing Simple Streams by Induced Laser Fluorescence”,Applied Physics Letters, 62 (17), (Apr. 1993), 2030-2032.

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