Electronic gain cell

Amplifiers – With semiconductor amplifying device – Including differential amplifier

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330252, H03F 345

Patent

active

050399527

ABSTRACT:
An amplifier circuit comprises first and second gain cells connected in cascade. Each of the gain cells comprises first and second common emitter differential transistors, a current source coupled to the emitters of the transistors, a first plurality of forward biased, series diodes connected between a power supply terminal and a base of the first transistor, and a second plurality of forward biased, series diodes connected between the power supply terminal and a base of the second transistor. A collector of the first transistor of the first gain cell is connected to the base of the first transistor of the second gain cell, and a collector of the second transistor of a first gain cell is connected to the base of the second transistor of the second gain cell. Because of the low inherent resistance of the biasing diodes, the operating speed of the amplifier is large, and the current amplification can be large without exceeding the power supply voltage. The current source limits the gain for high level signals without causing saturation of the transistors and therefore, does not comprise operating speed. The gain of each cell equals the numbers of diodes connected to the base of the transistor until the level of the current source.

REFERENCES:
patent: 3417263 (1968-12-01), Thomas
patent: 3533008 (1970-10-01), Lee
patent: 3573645 (1971-04-01), Wheatley, Jr.
patent: 3643107 (1972-02-01), Gilbreath
patent: 3693106 (1972-09-01), Long et al.
patent: 3702444 (1972-11-01), Owen
patent: 3818365 (1974-06-01), Hanson
patent: 3943463 (1975-03-01), Kuno et al.
patent: 3980963 (1976-09-01), Doi
patent: 3982115 (1976-09-01), Traa
patent: 3986113 (1976-10-01), Vifian
patent: 4002993 (1977-01-01), vande Plassche
patent: 4088963 (1978-05-01), Machida et al.
patent: 4155047 (1979-05-01), Rubens et al.
patent: 4163950 (1979-08-01), Damm et al.
patent: 4207480 (1980-06-01), Simeau
patent: 4240040 (1980-12-01), Saari
patent: 4243946 (1981-01-01), Wang
patent: 4259643 (1981-03-01), Monticelli
patent: 4322690 (1982-03-01), Laupman
patent: 4322770 (1982-03-01), Sendelweck
patent: 4403199 (1988-09-01), Blackmer
patent: 4439696 (1984-03-01), Yokoya
patent: 4468629 (1984-08-01), Choma, Jr.
patent: 4542350 (1985-09-01), Akazawa et al.
patent: 4590417 (1986-05-01), Tanaami et al.
patent: 4605906 (1986-08-01), Miller
patent: 4663599 (1987-05-01), Patch
patent: 4683443 (1987-07-01), Young et al.
patent: 4885547 (1989-12-01), Bell, Jr. et al.
patent: 4914401 (1990-04-01), Mader
Betts, "Diode-Connected Transistor as Load", IBM Technical Disclosure Bulletin, vol. 24, No. 10, Mar. 1982, pp. 5082-5083.

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