Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-06-14
2011-06-14
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S765000, C257S781000, C257SE23026, C977S779000
Reexamination Certificate
active
07960834
ABSTRACT:
An electronic element including an electronic element base and electrodes each of which has a first electrode having a surface composed of at least Al or an Al alloy and a second electrode composed of a metal nanoparticle sintered body and bonded to the first electrode. A bonding interface between the first electrode and the second electrode has a multilayer structure including, from the side of the first electrode to the side of the second electrode, (a) a first layer primarily composed of Al, (b) a second layer primarily composed of an Al oxide, (c) a third layer primarily composed of an alloy of Al and a constituent element of metal nanoparticles, and (d) a fourth layer primarily composed of the constituent element of the metal nanoparticles.
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PCT/JP2007/055290 International Search Report dated Jun. 12, 2007.
PCT/JP2007/055290 Written Opinion dated Jun. 12, 2007.
Dickstein & Shapiro LLP
Murata Manufacturing Co. Ltd.
Smoot Stephen W
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