Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-09-19
2006-09-19
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C505S190000
Reexamination Certificate
active
07109518
ABSTRACT:
This invention relates to an electronic element having an electron function which acts even at room temperature using a super dielectric effect. The element has a crystalline electron system, and uses a perovskite crystal in the ground state of a “macroscopic quantum effect” which occurs when the electron number is defined, or nearly defined. The electronic element used in an electric field such that the two-dimensional plane of doped crystals ground state of a “fractional quantum Hall effect” wherein the doping amount of the crystals is 0.05 or less, or if localization is introduced, 0.6 or less, and the crystals may have a doping amount variation determined by the degree of localization.
REFERENCES:
Sugahara et al., Anomalous AC Dielectric Response and Carrier State of C-Axis Oriented La2-xSrxCuO4Films, Physica C 293, 1997, 216-219.
Sugahara et al., Experimental Evidence of Pairing Fractional Quantum Hall Effect State in High Temperature Oxide Superconductors . . . , Physica C 317-318, 1999, 618-620.
Cohn PLLC Gary C
Crane Sara
Yokohama TLO Company Ltd.
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